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      A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors

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          Abstract

          One-dimensional (1D) metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications. The construction and integration of photodetectors or optical switches based on such nanostructures with tailored geometries have rapidly advanced in recent years. Active 1D nanostructure photodetector elements can be configured either as resistors whose conductions are altered by a charge-transfer process or as field-effect transistors (FET) whose properties can be controlled by applying appropriate potentials onto the gates. Functionalizing the structure surfaces offers another avenue for expanding the sensor capabilities. This article provides a comprehensive review on the state-of-the-art research activities in the photodetector field. It mainly focuses on the metal oxide 1D nanostructures such as ZnO, SnO 2, Cu 2O, Ga 2O 3, Fe 2O 3, In 2O 3, CdO, CeO 2, and their photoresponses. The review begins with a survey of quasi 1D metal-oxide semiconductor nanostructures and the photodetector principle, then shows the recent progresses on several kinds of important metal-oxide nanostructures and their photoresponses and briefly presents some additional prospective metal-oxide 1D nanomaterials. Finally, the review is concluded with some perspectives and outlook on the future developments in this area.

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          Most cited references117

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          ZnO nanowire UV photodetectors with high internal gain.

          ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.
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            Splendid one-dimensional nanostructures of zinc oxide: a new nanomaterial family for nanotechnology.

            Z. Wang (2008)
            Zinc oxide is a unique material that exhibits exceptional semiconducting, piezoelectric, and pyroelectric properties. Nanostructures of ZnO are equally as important as carbon nanotubes and silicon nanowires for nanotechnology and have great potential applications in nanoelectronics, optoelectronics, sensors, field emission, light-emitting diodes, photocatalysis, nanogenerators, and nanopiezotronics. Fundamental understanding about the growth of ZnO nanowires is of critical importance for controlling their size, composition, structure, and corresponding physical and chemical properties. The papers by She et al. and Ito et al. in this issue describe the controlled growth and field-emission properties of individual nanostructures, respectively. These studies provide new approaches and insight into the controlled growth and electrical properties of ZnO nanostructures.
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              Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications

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                Author and article information

                Journal
                Sensors (Basel)
                Sensors (Basel)
                Sensors (Basel, Switzerland)
                Molecular Diversity Preservation International (MDPI)
                1424-8220
                2009
                20 August 2009
                : 9
                : 8
                : 6504-6529
                Affiliations
                [1 ] World Premier International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
                [2 ] Sensor Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
                Author notes
                [#]

                These authors contributed equally to this work.

                [* ]Authors to whom correspondence should be addressed. E-Mails: zhai.tianyou@ 123456gmail.com or zhai.tianyou@ 123456nims.go.jp (T.Y.Z.); fang.xiaosheng@ 123456nims.go.jp (X.S.F.); Fax: +81 29-851-6280.
                Article
                sensors-09-06504
                10.3390/s90806504
                3312456
                22454597
                34f9b9d8-f763-4ad8-9dcd-efa9244f9ed3
                © 2009 by the authors; licensee MDPI, Basel, Switzerland

                This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license ( http://creativecommons.org/licenses/by/3.0/).

                History
                : 14 July 2009
                : 5 August 2009
                : 19 August 2009
                Categories
                Review

                Biomedical engineering
                one-dimensional nanostructures,sensor,photodetector,metal oxide semiconductor,transistor

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