Effects of strain on boron diffusion in Si and Si1−xGex

Hoyt, J. L.; Lefforge, D.; Turner, J E; Kuo, P.; Gibbons, J F

doi:10.1063/1.114019

Record: found
Abstract: not found
Article: not found

Effects of strain on boron diffusion in Si and Si1−xGex

Author(s): P. Kuo , J. L. Hoyt , J. F. Gibbons , J. E. Turner , D. Lefforge

Publication date Created: January 30 1995

Publication date (Print): January 30 1995

Journal: Applied Physics Letters

Publisher: AIP Publishing

Read this article at

ScienceOpenPublisher

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Related collections

Author and article information

Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: January 30 1995

Publication date (Print): January 30 1995

Volume: 66

Issue: 5

Pages: 580-582

Article

DOI: 10.1063/1.114019

SO-VID: 35b49783-1479-455d-8821-9926477d81c6

History

Data availability:

Comments

Comment on this article

Cited by 33

See all cited by

Effects of strain on boron diffusion in Si and Si1−xGex

Read this article at

Related collections

HR-EBSD (High Resolution - Electron Back Scatter Diffraction)

Author and article information

Journal

Article

History

Comments

Comment on this article

Similar content 3,144

Cited by 33