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      Quasiparticle effects in the bulk and surface-state bands of Bi\({}_{2}\)Se\({}_{3}\)and Bi\({}_{2}\)Te\({}_{3}\)topological insulators

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          Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

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            Experimental realization of a three-dimensional topological insulator, Bi2Te3.

            Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi2Te3 with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi2Te3 is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi2Te3 also points to promising potential for high-temperature spintronics applications.
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              The birth of topological insulators.

              Joel Moore (2010)
              Certain insulators have exotic metallic states on their surfaces. These states are formed by topological effects that also render the electrons travelling on such surfaces insensitive to scattering by impurities. Such topological insulators may provide new routes to generating novel phases and particles, possibly finding uses in technological applications in spintronics and quantum computing.
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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                1098-0121
                1550-235X
                April 2012
                April 10 2012
                : 85
                : 16
                Article
                10.1103/PhysRevB.85.161101
                35fcf2f6-1b21-400f-8374-4d31729dd810
                © 2012

                http://link.aps.org/licenses/aps-default-license

                http://link.aps.org/licenses/aps-default-accepted-manuscript-license

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