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      Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

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          Most cited references19

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          Capillary equilibria of dislocated crystals

          F. Frank (1951)
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            High resolution mapping of strains and rotations using electron backscatter diffraction

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              Effects of surface stress relaxation on the electron microscope images of dislocations normal to thin metal foils

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                Author and article information

                Journal
                Journal of Electronic Materials
                Journal of Elec Materi
                Springer Science and Business Media LLC
                0361-5235
                1543-186X
                June 2010
                March 14 2010
                June 2010
                : 39
                : 6
                : 743-746
                Article
                10.1007/s11664-010-1143-2
                3613a055-eb6d-4d2a-987a-55bb4693dad7
                © 2010

                http://www.springer.com/tdm

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