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      Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

      Author(s): ,
      Publication date Created:
      Publication date (Print):
      Journal: Solid-State Electronics
      Publisher: Elsevier BV

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          Resistivity of Bulk Silicon and of Diffused Layers in Silicon

          John C. Irvin (1962)
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            Drift Mobilities in Semiconductors. I. Germanium

            M. Prince (1953)
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              Quantum-Transport Theories and Multiple Scattering in Doped Semiconductors. II. Mobility of\(n\)-type Gallium Arsenide

              E. J. Moore (1967)
              Article 0 comments Cited 36 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Solid-State Electronics
                Abbreviated Title: Solid-State Electronics
                Publisher: Elsevier BV
                ISSN (Print): 00381101
                Publication date Created: June 1968
                Publication date (Print): June 1968
                Volume: 11
                Issue: 6
                Pages: 599-602
                Article
                DOI: 10.1016/0038-1101(68)90012-9
                SO-VID: 366a9bab-8935-4874-82ad-290621e88c3d
                Copyright © © 1968
                License:

                http://www.elsevier.com/tdm/userlicense/1.0/

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