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      Phonon-derived ultrafast relaxation of spin-valley polarized states in MoS_{2}

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          Abstract

          The valley degree of freedom and the possibility of spin-valley coupling of solid materials have attracted growing interest, and the relaxation dynamics of spin- and valley-polarized states has become an important focus of recent studies. In spin-orbit-coupled inversion-asymmetric two-dimensional materials, such as MoS_{2} it has been found that the spin randomization is characteristically faster than the time scales for inter- and intra-valley scatterings. In this study, we examined the ultrafast non-collinear spin dynamics of an electron valley in monolayer MoS_{2} by using real-time propagation time-dependent density functional theory. We found that the spin precession of an electron in the valley is sharply coupled with the lowest-lying optical phonon that release the in-plane mirror symmetry. This indicates that the spin randomization of MoS_{2} is mainly caused by spin-phonon interaction. We further suggest that flipping of spins in a spin-orbit-coupled system can be achieved by the control over phonons.

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          Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

          We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photo-induced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multi-valley materials with strong spin-orbit coupling and inversion symmetry breaking.
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            Control of valley polarization in monolayer MoS2 by optical helicity

            Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices. In particular, if there are two or more conduction (or valence) band extrema in momentum space, then confining charge carriers in one of these valleys allows the possibility of valleytronic devices. Such valley polarization has been demonstrated by using strain and magnetic fields, but neither of these approaches allow for dynamic control. Recently, optical control of valley occupancy in graphene with broken inversion symmetry has been proposed but remains experimentally difficult to realize. Here we demonstrate that optical pumping with circularly-polarized light can achieve complete dynamic valley polarization in monolayer MoS2, a two dimensional (2D) non-centrosymmetric crystal with direct energy gaps at two valleys. Moreover, this polarization is retained for longer than 1 ns. Our results demonstrate the viability of optical valley control and valley-based electronic and optoelectronic applications in MoS2 monolayers.
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              Valley polarization in MoS2 monolayers by optical pumping

              , , (2013)
              We report experimental evidences on selective occupation of the degenerate valleys in MoS2 monolayers by circularly polarized optical pumping. Over 30% valley polarization has been observed at K and K' valley via the polarization resolved luminescence spectra on pristine MoS2 monolayers. It demonstrates one viable way to generate and detect valley polarization towards the conceptual valleytronics applications with information carried by the valley index.
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                Author and article information

                Journal
                2017-04-04
                Article
                1704.00921
                367783fe-c866-48f3-b2d2-c190463bd881

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                Custom metadata
                cond-mat.mtrl-sci cond-mat.mes-hall

                Condensed matter,Nanophysics
                Condensed matter, Nanophysics

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