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      Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

      Author(s): , , , , , ,
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Calculated elastic constants for stress problems associated with semiconductor devices

          W A Brantley (1973)
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            Solar cell efficiency tables (version 39)

            Martin A. Green, Keith Emery, Yoshihiro Hishikawa … (2012)
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              Bonding of silicon wafers for silicon‐on‐insulator

              W. Maszara, J. McKitterick, G. Goetz … (1988)
              Article 0 comments Cited 139 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: May 28 2013
                Publication date (Print): May 28 2013
                Volume: 113
                Issue: 20
                Page: 203512
                Article
                DOI: 10.1063/1.4807905
                SO-VID: 36901392-63a5-4ef9-a529-ddeb61135a5a
                Copyright © © 2013
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