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      Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

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          Most cited references 42

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          Dislocation Theory of Yielding and Strain Ageing of Iron

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            Analysis of deep levels inn‐type GaN by transient capacitance methods

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              Electrical properties of dislocations and point defects in plastically deformed silicon

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                June 14 2018
                June 14 2018
                : 123
                : 22
                : 224504
                Affiliations
                [1 ]Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
                [2 ]Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
                [3 ]Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
                [4 ]Materials Department, University of California, Santa Barbara, California 93106, USA
                Article
                10.1063/1.5022806
                © 2018

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