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      Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

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          Atomic Force Microscope

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            Surface Studies by Scanning Tunneling Microscopy

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              A single-atom transistor.

              The ability to control matter at the atomic scale and build devices with atomic precision is central to nanotechnology. The scanning tunnelling microscope can manipulate individual atoms and molecules on surfaces, but the manipulation of silicon to make atomic-scale logic circuits has been hampered by the covalent nature of its bonds. Resist-based strategies have allowed the formation of atomic-scale structures on silicon surfaces, but the fabrication of working devices-such as transistors with extremely short gate lengths, spin-based quantum computers and solitary dopant optoelectronic devices-requires the ability to position individual atoms in a silicon crystal with atomic precision. Here, we use a combination of scanning tunnelling microscopy and hydrogen-resist lithography to demonstrate a single-atom transistor in which an individual phosphorus dopant atom has been deterministically placed within an epitaxial silicon device architecture with a spatial accuracy of one lattice site. The transistor operates at liquid helium temperatures, and millikelvin electron transport measurements confirm the presence of discrete quantum levels in the energy spectrum of the phosphorus atom. We find a charging energy that is close to the bulk value, previously only observed by optical spectroscopy.
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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                October 14 2018
                October 14 2018
                : 124
                : 14
                : 144502
                Affiliations
                [1 ]Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ, United Kingdom
                [2 ]Institute of Micro- and Nanoelectronics, Department of Micro- and Nanoelectronic Systems (MNES), Ilmenau University of Technology, Gustav-Kirchhoff-Str.1, 98693 Ilmenau, Germany
                [3 ]Hitachi Cambridge Laboratory, J. J. Thomson Avenue, CB3 0HE Cambridge, United Kingdom
                Article
                10.1063/1.5050773
                36e8a60c-002b-4d59-9718-b9c15328ddf9
                © 2018
                History

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