Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

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Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

Kagan, Mitzi, Dimitrakopoulos (1999)

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

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New n-Type Transparent Conducting Oxides

Tadatsugu Minami (2000)

Most research to develop highly transparent and conductive thin films has focused onn-type semiconductors consisting of metal oxides. Historically, transparent conducting oxide (TCO) thin films composed of binary compounds such as SnO2and In2O3were developed by means of chemical- and physical-deposition methods. Impurity-doped SnO2(Sb- or F-doped SnO2, e.g., SnO2:Sb or SnO2: F) and In2O3: Sn (indium tin oxide, ITO) films are in practical use. In addition to binary compounds, ternary compounds such as Cd2SnO4, CdSnO3, and CdIn2O4were developed prior to 1980, but their TCO films have not yet been used widely.