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      High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

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          Scattering of electrons at threading dislocations in GaN

          Dharanipal Doppalapudi, Nils G. Weimann, Theodore Moustakas … (1998)
          Article 0 comments Cited 156 times – based on 0 reviews     Review now
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            The role of dislocation scattering in n-type GaN films

            L. Eastman, D. Doppalapudi, H. Ng … (1998)
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              Infrared dielectric functions and phonon modes of high-quality ZnO films

              V. Riede, B. N. Mbenkum, N. Ashkenov … (2003)
              Article 0 comments Cited 94 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: June 02 2003
                Publication date (Print): June 02 2003
                Volume: 82
                Issue: 22
                Pages: 3901-3903
                Article
                DOI: 10.1063/1.1578694
                SO-VID: 3b7fd37b-6781-4f28-b058-f72b9ec0c9bc
                Copyright statement: © 2003
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                Self URI (article page): http://aip.scitation.org/doi/10.1063/1.1578694

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