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      Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect

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          Abstract

          We study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100 nm and length of about 1–25 μm formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 ÷ 1 μm results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1 μm increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of ‘black silicon’, which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing.

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          Most cited references 19

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          Metal-assisted chemical etching of silicon: a review.

          This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.
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            Diameter-controlled synthesis of single-crystal silicon nanowires

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              Semiconductor nanowire: what's next?

               R Yan,  M Fardy,  Peidong Yang (2010)
              In this perspective, we take a critical look at the research progress within the nanowire community for the past decade. We discuss issues on the discovery of fundamentally new phenomena versus performance benchmarking for many of the nanowire applications. We also notice that both the bottom-up and top-down approaches have played important roles in advancing our fundamental understanding of this new class of nanostructures. Finally we attempt to look into the future and offer our personal opinions on what the future trends will be in nanowire research.
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                Author and article information

                Journal
                Nanoscale Res Lett
                Nanoscale Res Lett
                Nanoscale Research Letters
                Springer
                1931-7573
                1556-276X
                2012
                25 September 2012
                : 7
                : 1
                : 524
                Affiliations
                [1 ]Physics Department, Lomonosov Moscow State University, Leninskie Gory 1, Moscow, 119991, Russia
                [2 ]Skobeltsyn Institute of Nuclear Physics (MSU SINP), Lomonosov Moscow State University, Leninskie Gory 1(2), Moscow, 119234, Russia
                [3 ]Institute of Photonic Technology, Albert-Einstein Street 9, Jena, 07745, Germany
                Article
                1556-276X-7-524
                10.1186/1556-276X-7-524
                3499155
                23009051
                Copyright ©2012 Osminkina et al.; licensee Springer.

                This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

                Categories
                Nano Express

                Nanomaterials

                light localization, black silicon, silicon nanowires, raman scattering

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