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      • Record: found
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      Low temperature deposition of SiO2 and PSG using SiH4, N2O and phosphorous vapour for damage-free passivation of InP-based PIN diodes by plasma- and photo-assisted LPCVD

      Author(s): , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Surface Science
      Publisher: Elsevier BV

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          Journal
          Title: Applied Surface Science
          Abbreviated Title: Applied Surface Science
          Publisher: Elsevier BV
          ISSN (Print): 01694332
          Publication date Created: May 1993
          Publication date (Print): May 1993
          Volume: 69
          Issue: 1-4
          Pages: 277-280
          Article
          DOI: 10.1016/0169-4332(93)90518-G
          SO-VID: 3c16d72f-a4a2-40f5-91da-e78a77744959
          Copyright © © 1993
          License:

          https://www.elsevier.com/tdm/userlicense/1.0/

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