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# Magnetic domain texture and the Dzyaloshinskii-Moriya interaction in Pt/Co/IrMn and Pt/Co/FeMn thin films with perpendicular exchange bias

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### Abstract

Antiferromagnetic materials present us with rich and exciting physics, which we can exploit to open new avenues in spintronic device applications. We explore perpendicularly magnetized exchange biased systems of Pt/Co/IrMn and Pt/Co/FeMn, where the crossover from paramagnetic to antiferromagnetic behavior in the IrMn and FeMn layers is accessed by varying the thickness. We demonstrate, through magneto-optical imaging, that the magnetic domain morphology of the ferromagnetic Co layer is influenced by the N$${\'e}$$el order of the antiferromagnet (AFM) layers. We relate these variations to the anisotropy energy of the AFM layer and the ferromagnet-antiferromagnet (FM-AFM) inter-layer exchange coupling. We also quantify the interfacial Dzyaloshinskii-Moriya interaction (DMI) in these systems by Brillouin light scattering spectroscopy. The DMI remains unchanged, within experimental uncertainty, for different phases of the AFM layers, which allows us to conclude that the DMI is largely insensitive to both AFM spin order and exchange bias. Understanding such fundamental mechanisms is crucial for the development of future devices employing chiral spin textures, such as N$${\'e}$$el domain walls and skyrmions, in FM-AFM heterostructures.

### Most cited references5

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### Spin torque switching with the giant spin Hall effect of tantalum

(2012)
We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.
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### Author and article information

###### Journal
22 May 2018
###### Article
1805.08483