Rb-induced (3x1) and (6x1) reconstructions on Si(111)-(7x7): A LEED and STM study

Abstract

We present a study of the rubidium adsorption on the Si(111)-(7x7) surface and the related Rb-induced reconstructions as a function of deposition temperature and Rb-coverage via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Sample analysis via LEED allowed to observe for the first time a Rb/Si(111)-(6x1) reconstruction. The STM image analysis allowed to obtain the first real space characterization of the Rb/Si(111)-(3x1) surface. In addition, STM provided a direct and local information on the surface arrangement as well as further insights on the interaction between Si and Rb atoms and on the growth dynamics.