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      Atomically resolved silicon donor states of β-Ga2O3

      Author(s): , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Oxygen vacancies and donor impurities in β-Ga2O3

          C. Van de Walle, A. Janotti, J Weber … (2010)
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            Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

            Hideo Hosono, Ryuta Waseda, Naoyuki Ueda … (1997)
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              Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

              Kengo Nishiguchi, Hideo Aida, Yoichi Yaguchi … (2008)
              Article 0 comments Cited 140 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: April 04 2011
                Publication date (Print): April 04 2011
                Volume: 98
                Issue: 14
                Page: 142116
                Article
                DOI: 10.1063/1.3578195
                SO-VID: 3d651b47-dd6f-4c55-930d-f1eca86ec495
                Copyright © © 2011
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