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Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface
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Most cited references17
- Record: found
- Abstract: not found
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Wet etching of GaN, AlN, and SiC: a review
J.H. Edgar, D Zhuang (2005)
- Record: found
- Abstract: not found
- Article: not found
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
V. Ramachandran, M Brady, A. Smith … (1998)
- Record: found
- Abstract: not found
- Article: not found
Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching
Fredrik Owman, C. Hallin, Per Mårtensson … (1996)