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      Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications

      Author(s): 1 , 2 , 2 , 2 , 2 , 1
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

          M. Masnadi-Shirazi, T Tiedje, R Lewis (2012)
          Article 0 comments Cited 25 times – based on 0 reviews     Review now
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            Composition determination in the GaAs/(Al, Ga)As system using contrast in dark-field transmission electron microscope images

            E. Bithell, W. Stobbs (2006)
            Article 0 comments Cited 22 times – based on 0 reviews     Review now
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              Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides

              T Tiedje, E.C. Young, A. MASCARENHAS (2008)
              Article 0 comments Cited 20 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: April 09 2018
                Publication date (Print): April 09 2018
                Volume: 112
                Issue: 15
                Page: 151905
                Affiliations
                [1 ]Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
                [2 ]IES, Université de Montpellier, CNRS, F-34000 Montpellier, France
                Article
                DOI: 10.1063/1.5024199
                SO-VID: 3df7dcbb-74ae-4947-9629-3ad5fb758fe2
                Copyright © © 2018
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