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      Band parameters for III–V compound semiconductors and their alloys

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      Journal of Applied Physics
      AIP Publishing

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          Temperature dependence of the energy gap in semiconductors

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            Is Open Access

            Spontaneous polarization and piezoelectric constants of III-V nitrides

            The spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry phase approach to polarization in solids. The piezoelectric constants are found to be up 10 times larger than in conventional III-V's and II-VI's, and comparable to those of ZnO. Further properties at variance with those of conventional III-V compounds are the sign of the piezoelectric constants (positive as in II-VI's) and the very large spontaneous polarization.
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              Valence-Band Parameters in Cubic Semiconductors

              P. Lawaetz (1971)
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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                June 2001
                June 2001
                : 89
                : 11
                : 5815-5875
                Article
                10.1063/1.1368156
                3eb961d0-060e-4322-905f-f931eebbe2e4
                © 2001
                History

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