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      A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD

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          Abstract

          Hydrogenated nanocrystalline silicon (nc-Si:H) thin film has received a great deal of attention as a promising material for flat panel display transistors, solar cells, etc. However, the multiphase structure of nc-Si:H leads to many defects. One of the major challenges is how to reduce the defects conveniently. In this work, we developed a simple and effective method to deposit low-defect-density nc-Si:H thin film. This method is simply by tuning the deposition pressure in a high-pressure range in plasma-enhanced chemical vapor deposition (PECVD) process. Microstructures of the nc-Si:H were characterized by Raman, AFM, and SEM. Furthermore, we focused on the defect density which was the key characteristic for photovoltaic materials and achieved the defect density of 3.766 × 10 16 cm −3. This defect density is lower than that of previous studies on the fabrication of low-defect-density nc-Si:H by other complex methods in PECVD process. The minority carrier lifetime of nc-Si:H is thus greatly improved. Moreover, we demonstrated the mechanism about the effect of deposition pressure on the ion bombardment and proved that the defect density is the key characteristic for nc-Si:H photovoltaic material.

          Electronic supplementary material

          The online version of this article (10.1186/s11671-018-2641-z) contains supplementary material, which is available to authorized users.

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          Material and solar cell research in microcrystalline silicon

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            Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells

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              High efficiency multi-junction thin film silicon cells incorporating nanocrystalline silicon

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                Author and article information

                Contributors
                huanyan243@163.com
                liuhong@sjtu.edu.cn
                wzshen@sjtu.edu.cn
                Journal
                Nanoscale Res Lett
                Nanoscale Res Lett
                Nanoscale Research Letters
                Springer US (New York )
                1931-7573
                1556-276X
                10 August 2018
                10 August 2018
                2018
                : 13
                Affiliations
                ISNI 0000 0004 0368 8293, GRID grid.16821.3c, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, , Shanghai Jiao Tong University, ; Shanghai, 200240 People’s Republic of China
                Article
                2641
                10.1186/s11671-018-2641-z
                6086780
                30097800
                © The Author(s). 2018

                Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

                Funding
                Funded by: FundRef http://dx.doi.org/10.13039/501100001809, National Natural Science Foundation of China;
                Award ID: 61234005, 11474201 and 11674225
                Award Recipient :
                Categories
                Nano Express
                Custom metadata
                © The Author(s) 2018

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