Blog
About

  • Record: found
  • Abstract: found
  • Article: found
Is Open Access

A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD

Read this article at

Bookmark
      There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

      Abstract

      Hydrogenated nanocrystalline silicon (nc-Si:H) thin film has received a great deal of attention as a promising material for flat panel display transistors, solar cells, etc. However, the multiphase structure of nc-Si:H leads to many defects. One of the major challenges is how to reduce the defects conveniently. In this work, we developed a simple and effective method to deposit low-defect-density nc-Si:H thin film. This method is simply by tuning the deposition pressure in a high-pressure range in plasma-enhanced chemical vapor deposition (PECVD) process. Microstructures of the nc-Si:H were characterized by Raman, AFM, and SEM. Furthermore, we focused on the defect density which was the key characteristic for photovoltaic materials and achieved the defect density of 3.766 × 10 16 cm −3. This defect density is lower than that of previous studies on the fabrication of low-defect-density nc-Si:H by other complex methods in PECVD process. The minority carrier lifetime of nc-Si:H is thus greatly improved. Moreover, we demonstrated the mechanism about the effect of deposition pressure on the ion bombardment and proved that the defect density is the key characteristic for nc-Si:H photovoltaic material.

      Electronic supplementary material

      The online version of this article (10.1186/s11671-018-2641-z) contains supplementary material, which is available to authorized users.

      Related collections

      Most cited references 28

      • Record: found
      • Abstract: not found
      • Article: not found

      Material and solar cell research in microcrystalline silicon

        Bookmark
        • Record: found
        • Abstract: not found
        • Article: not found

        Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells

          Bookmark
          • Record: found
          • Abstract: not found
          • Article: not found

          High efficiency multi-junction thin film silicon cells incorporating nanocrystalline silicon

            Bookmark

            Author and article information

            Affiliations
            ISNI 0000 0004 0368 8293, GRID grid.16821.3c, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, , Shanghai Jiao Tong University, ; Shanghai, 200240 People’s Republic of China
            Contributors
            huanyan243@163.com
            liuhong@sjtu.edu.cn
            wzshen@sjtu.edu.cn
            Journal
            Nanoscale Res Lett
            Nanoscale Res Lett
            Nanoscale Research Letters
            Springer US (New York )
            1931-7573
            1556-276X
            10 August 2018
            10 August 2018
            2018
            : 13
            30097800 6086780 2641 10.1186/s11671-018-2641-z
            © The Author(s). 2018

            Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

            Funding
            Funded by: FundRef http://dx.doi.org/10.13039/501100001809, National Natural Science Foundation of China;
            Award ID: 61234005, 11474201 and 11674225
            Award Recipient :
            Categories
            Nano Express
            Custom metadata
            © The Author(s) 2018

            Comments

            Comment on this article