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      Crystal-facet-dependent metallization in electrolyte-gated rutile TiO2 single crystals.

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          Abstract

          The electric-field-induced metallization of insulating oxides is a powerful means of exploring and creating exotic electronic states. Here we show by the use of ionic liquid gating that two distinct facets of rutile TiO2, namely, (101) and (001), show clear evidence of metallization, with a disorder-induced metal-insulator transition at low temperatures, whereas two other facets, (110) and (100), show no substantial effects. This facet-dependent metallization can be correlated with the surface energy of the respective crystal facet and, thus, is consistent with oxygen vacancy formation and diffusion that results from the electric fields generated within the electric double layers at the ionic liquid/TiO2 interface. These effects take place at even relatively modest gate voltages.

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          Author and article information

          Journal
          ACS Nano
          ACS nano
          1936-086X
          1936-0851
          Sep 24 2013
          : 7
          : 9
          Affiliations
          [1 ] IBM Almaden Research Center , San Jose, California 95120, United States.
          Article
          10.1021/nn403340d
          23962081
          3fb41e54-799f-4dc5-815e-17bb0c1c6c72
          History

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