A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic
lapping is introduced to improve the machining performance of carbide silicon (SiC).
To fulfill the method, an ultrasonic assisted machining apparatus is designed and
manufactured. Comparative experiments with and without ultrasonic assisted vibration
are conducted. According to the experimental results, the material removal rate (MRR)
and surface generation are investigated. The results show that both ultrasonic lapping
and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley
(PV) value of surface roughness, the effect of ultrasonic in lapping can contribute
to the higher MRR and better surface quality for the following CMP. The ultrasonic
assisted vibration in CMP can promote the chemical reaction, increase the MRR and
improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved
the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent
ultrasonic assisted processing method can be used to improve the material removal
rate and surface roughness for the single crystal SiC wafer.