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Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

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      Abstract

      A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.

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      Most cited references 30

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            Author and article information

            Affiliations
            School of Mechanical and Aerospace Engineering, Jilin University, 5988 Renmin Street, Changchun 130025, China; huyong@ 123456jlu.edu.cn (Y.H.); shidong16@ 123456mails.jlu.edu.cn (D.S.); self-song@ 123456163.com (Y.H.); xdsun15@ 123456mails.jlu.edu.cn (X.S.)
            Author notes
            [* ]Correspondence: hwzhao@ 123456jlu.edu.cn ; Tel.: +86-431-85095757
            Journal
            Materials (Basel)
            Materials (Basel)
            materials
            Materials
            MDPI
            1996-1944
            18 October 2018
            October 2018
            : 11
            : 10
            30340373
            6213398
            10.3390/ma11102022
            materials-11-02022
            © 2018 by the authors.

            Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

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