Volatile metal oxide incorporation in layers of GaAs and Ga1−xAlxAs grown by molecular beam epitaxy

Freeouf, J. L.; Wolford, D. J.; Pettit, G D; Woodall, J. M.; Kirchner, P. D.

doi:10.1116/1.571138

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Volatile metal oxide incorporation in layers of GaAs and Ga1−xAlxAs grown by molecular beam epitaxy

Author(s): P. D. Kirchner , J. M. Woodall , J. L. Freeouf , D. J. Wolford , G. D. Pettit

Publication date Created: September 1981

Publication date (Print): September 1981

Journal: Journal of Vacuum Science and Technology

Publisher: American Vacuum Society

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Title: Journal of Vacuum Science and Technology

Abbreviated Title: Journal of Vacuum Science and Technology

Publisher: American Vacuum Society

ISSN (Print): 0022-5355

Publication date Created: September 1981

Publication date (Print): September 1981

Volume: 19

Issue: 3

Pages: 604-606

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DOI: 10.1116/1.571138

SO-VID: 40d9f499-d3e0-4939-9d8d-8beb0acf2fce

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