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Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si
March 27 2009
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Most cited references33
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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
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Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
G Capellini, G. Assanto, F Galluzzi … (1998)