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      Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors

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          Most cited references 19

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          Carrier mobilities in silicon empirically related to doping and field

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            The Current Understanding of Charges in the Thermally Oxidized Silicon Structure

             Bruce Deal (1974)
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              Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers

               A. Fowler,  F. Fang (1970)
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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9383
                February 1980
                February 1980
                : 27
                : 2
                : 356-367
                Article
                10.1109/T-ED.1980.19868
                40ef367f-c941-4e53-adb1-8399d24d79f1
                © 1980
                Product

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