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      Characterization of GaAs/(GaAs)n(AlAs)msurface‐emitting laser structures through reflectivity and high‐resolution electron microscopy measurements

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      Journal of Applied Physics
      AIP Publishing

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          Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers

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            Visible, room‐temperature, surface‐emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter‐wave high reflectors and AlGaAs/GaAs multiple quantum wells

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              High‐finesse (Al,Ga)As interference filters grown by molecular beam epitaxy

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                August 1989
                August 1989
                : 66
                : 3
                : 1023-1032
                Article
                10.1063/1.343488
                414b9fb9-c603-45a9-b5c3-4aa01651c31e
                © 1989
                History

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