- Record: found
- Abstract: not found
- Article: not found
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
M. L. Green ,
M.-Y. Ho ,
B. Busch ,
G. D. Wilk ,
T. Sorsch ,
T. Conard ,
B. Brijs ,
W. Vandervorst ,
P. I. Räisänen ,
D. Muller ,
M. Bude ,
J. Grazul
December 15 2002
December 15 2002
Read this article at
ScienceOpenPublisher
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Most cited references14
- Record: found
- Abstract: not found
- Article: not found
High-κ gate dielectrics: Current status and materials properties considerations
G. D. Wilk, J. M. Anthony, R. M. Wallace (2001)
- Record: found
- Abstract: not found
- Article: not found
Thermodynamic stability of binary oxides in contact with silicon
D G Schlom, K. J. Hubbard (1996)
- Record: found
- Abstract: not found
- Article: not found
Structure and stability of ultrathin zirconium oxide layers on Si(001)
E. Gusev, M. Gribelyuk, M Copel (2000)