- Record: found
- Abstract: not found
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Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker ,
D. C. Gilmer ,
D. Veksler ,
P. Kirsch ,
L. Vandelli ,
A. Padovani ,
L. Larcher ,
K. McKenna ,
A. Shluger ,
V. Iglesias ,
M. Porti ,
M. Nafría
December 15 2011
December 15 2011
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Most cited references40
- Record: found
- Abstract: not found
- Article: not found
Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set
G Kresse, J. Furthmüller (1996)
- Record: found
- Abstract: not found
- Article: not found
Visualization of an Oxygen-deficient Bottom Water Circulation in Osaka Bay, Japan
Y Hosokawa, K Furukawa, H. Yoshimura … (2000)
- Record: found
- Abstract: not found
- Article: not found
Resistive switching in transition metal oxides
Akihito Sawa (2008)