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      Effect of mismatch strain on band gap in III‐V semiconductors

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      Journal of Applied Physics
      AIP Publishing

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          Piezo-Electroreflectance in Ge, GaAs, and Si

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            Determination of the lattice constant of epitaxial layers of III-V compounds

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              Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                June 15 1985
                June 15 1985
                : 57
                : 12
                : 5428-5432
                Article
                10.1063/1.334817
                42313921-94c0-466a-acfd-86dc1ed42999
                © 1985
                History

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