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      Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

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          Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

          Kohei Sasaki, Takekazu Masui, Shigenobu Yamakoshi … (2012)
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            Deep-ultraviolet transparent conductive β-Ga2O3 thin films

            Masahiro Orita, Hiromichi Ohta, Masahiro Hirano … (2000)
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              Oxygen vacancies and donor impurities in β-Ga2O3

              C. Van de Walle, A. Janotti, J Weber … (2010)
              Article 0 comments Cited 186 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: September 16 2013
                Publication date (Print): September 16 2013
                Volume: 103
                Issue: 12
                Page: 123511
                Article
                DOI: 10.1063/1.4821858
                SO-VID: 4275e59d-6ddd-408c-81b6-893dab2f42e4
                Copyright © © 2013
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