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      Deposition Methods of Graphene as Electrode Material for Organic Solar Cells

      1 , 1 , 2 , 1 , 3
      Advanced Energy Materials
      Wiley

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          Most cited references136

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          Is Open Access

          Graphene: Status and Prospects

          A. K. Geim (2010)
          Graphene is a wonder material with many superlatives to its name. It is the thinnest material in the universe and the strongest ever measured. Its charge carriers exhibit giant intrinsic mobility, have the smallest effective mass (it is zero) and can travel micrometer-long distances without scattering at room temperature. Graphene can sustain current densities 6 orders higher than copper, shows record thermal conductivity and stiffness, is impermeable to gases and reconciles such conflicting qualities as brittleness and ductility. Electron transport in graphene is described by a Dirac-like equation, which allows the investigation of relativistic quantum phenomena in a bench-top experiment. What are other surprises that graphene keeps in store for us? This review analyses recent trends in graphene research and applications, and attempts to identify future directions in which the field is likely to develop.
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            Honeycomb carbon: a review of graphene.

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              Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

              Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.
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                Author and article information

                Journal
                Advanced Energy Materials
                Adv. Energy Mater.
                Wiley
                16146832
                May 2017
                May 2017
                November 07 2016
                : 7
                : 10
                : 1601393
                Affiliations
                [1 ]Future Industries Institute; University of South Australia; Mawson Lakes South Australia 5095 Australia
                [2 ]MacDiarmid Institute; Victoria University of Wellington; Wellington 6140 New Zealand
                [3 ]Department of Chemistry and Chemical Engineering; Chalmers University of Technology; SE-412 96 Goteborg Sweden
                Article
                10.1002/aenm.201601393
                4302bb86-fceb-48cc-ae44-d7cb26a8d7d4
                © 2016

                http://doi.wiley.com/10.1002/tdm_license_1

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