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      Catalyst-referred etching of 4HSiC substrate utilizing hydroxyl radicals generated from hydrogen peroxide molecules

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          LXXIII.—Oxidation of tartaric acid in presence of iron

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            Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

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              Novel abrasive-free planarization of 4H-SiC (0001) using catalyst

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                Author and article information

                Journal
                Surface and Interface Analysis
                Surf. Interface Anal.
                Wiley
                01422421
                10969918
                June 2008
                June 2008
                2008
                : 40
                : 6-7
                : 998-1001
                Article
                10.1002/sia.2804
                432a410c-bd46-4cf1-b8c5-185d89739c6c
                © 2008

                http://doi.wiley.com/10.1002/tdm_license_1.1

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