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Strain dependence of the performance enhancement in strained-Si n-MOSFETs
Author(s):
J. Welser
,
J. HOYT
,
S. TAKAGI
,
J. GIBBONS
Publication date:
1994
Journal:
Proceedings of 1994 IEEE International Electron Devices Meeting
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HR-EBSD (High Resolution - Electron Back Scatter Diffraction)
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