The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)

Thornton, J. M. C.

doi:10.1116/1.585754

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The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)

Author(s): J. M. C. Thornton

Publication date (Print): July 1991

Journal: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Publisher: American Vacuum Society

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Journal ID (publisher-id): JVTBD9

Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Abbreviated Title: J. Vac. Sci. Technol. B

Publisher: American Vacuum Society

ISSN (Print): 0734211X

Publication date (Print): July 1991

Volume: 9

Issue: 4

Page: 2146

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DOI: 10.1116/1.585754

SO-VID: 43fad574-a902-41af-8ff5-ad58aab4f0b9

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The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)

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HR-EBSD (High Resolution - Electron Back Scatter Diffraction)

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