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      High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes

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          Abstract

          Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below \(10^{12} \unit{A/m^2}\), suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.

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          Most cited references 11

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          Magnetic domain-wall racetrack memory.

          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            Switching a spin-valve back and forth by current-induced domain wall motion

             G Faini,  A Fert,  A Vaurès (2003)
            We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the current density required to move DW is only of the order of 10^6 A/cm^2. For H = 3 Oe, a back and forth DW motion between two stable positions is observed. We also discuss the effect of an applied field on the DW motion.
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              Control of Domain Wall Polarity by Current Pulses

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                Author and article information

                Journal
                20 October 2008
                2009-01-30
                Article
                10.1143/APEX.2.023003
                0810.3576

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                Custom metadata
                Applied Physics Express 2 (2009) 023003
                Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003
                cond-mat.mtrl-sci
                ccsd hal-00332055

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