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      Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

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      Journal of Applied Physics

      AIP Publishing

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          Electron Emission in Intense Electric Fields

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            High-κ gate dielectrics: Current status and materials properties considerations

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              General Relationship for the Thermal Oxidation of Silicon

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                September 2001
                September 2001
                : 90
                : 5
                : 2057-2121
                Article
                10.1063/1.1385803
                © 2001
                Product

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