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      Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes

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          Abstract

          A novel lateral Ge / Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge / Si interface in the vertical direction. Modulating the Si mesa thickness ( 0 - 0.4 μ m ) and impurity concentration of the intrinsic Si substrate ( 1 × 10 16 - 4 × 10 16 cm - 3 ) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is 0.3 μ m , and the impurity concentration of the Si substrate is 2 × 10 16 cm - 3 , the Lateral Avalanche PhotoDiode (LAPD) exhibits a peak gain of 246 under 1.55 μ m incident light power of - 22.2 dBm , which increases with decreasing light intensity.

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          Author and article information

          Journal
          TST
          Tsinghua Science and Technology
          Tsinghua University Press (Xueyan Building, Tsinghua University, Beijing 100084, China )
          1007-0214
          05 February 2019
          : 24
          : 1
          : 1-8
          Affiliations
          [1]∙ Wenzhou Wu, Zhi Liu, Jun Zheng, Yuhua Zuo, and Buwen Cheng are with the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 and the College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China. E-mail: wuwenzhou@ 123456semi.ac.cn ; zhiliu@ 123456semi.ac.cn ; zhengjun@ 123456semi.ac.cn ; yhzuo@ 123456semi.ac.cn .
          Author notes
          * To whom correspondence should be addressed. E-mail: cbw@ 123456semi.ac.cn .

          Wenzhou Wu received the BEng degree from Xidian University, China in 2012. He is currently a PhD student in Institute of Semiconductor, Chinese Academy of Sciences, China. His research interest is silicon photonics, especially silicon based photo-detectors.

          Zhi Liu received the BSci degree from Taiyuan University of Technology, China in 2009, and the PhD degree from Institute of Semiconductor, Chinese Academy of Sciences, China in 2014. Since 2014, he has been with Institute of Semiconductor, Chinese Academy of Sciences, China. His research interest is silicon based group IV material growth and silicon photonics. He has authored or co-authored more than 30 journal articles.

          Jun Zheng received the BSci degree from Beijing Institue of Technology, China in 2006 and PhD degree in physical electronics from Graduated University of Chinese Academy of Sciences, China in 2011. He is now an associate researcher in Institute of Semiconductor, Chinese Academy of Sciences, China. His research interest is silicon photonics, especially silicon based materials and detectors.

          Yuhua Zuo received the BEng and MEng degrees from Tsinghua University, China in 1997 and 2000, respectively, and the PhD degree in microelectronics and optoelectronics from Institute of Semiconductors, Chinese Academy of Sciences, China in 2003. She is a professor in both University of Chinese Academy of Sciences, China and Institute of Semiconductors, Chinese Academy of Sciences. She worked as visiting scholar in Department of Materials, University of California at Los Angeles for 8 months in 2016. She has extensive research expertise and a wide range of research interests in novel Si-based optoelectronics materials and devices, such as PD, APD, and solar cells.

          Buwen Cheng received the BS degree and MS degree in condensed physics from Beijing Normal University, China in 1989 and 1992, respectively. In 2006, he received the PhD degree from the Institute of Semiconductors, Chinese Academy of Sciences (ISCAS), China. He joined the ISCAS in 1992. Since 2007, he has been a professor. His current research interests include growth of Si-based materials (such as SiGe, Ge, and GeSn) and device applications. He has authored or co-authored more than 150 journal articles and holds 15 patents.

          Article
          1007-0214-24-1-1
          10.26599/TST.2018.9010065
          460dcf17-e5d4-4f7a-93fb-2810013501a8

          Software engineering,Data structures & Algorithms,Applied computer science,Computer science,Artificial intelligence,Hardware architecture
          electric field confinement,lateral structure,avalanche photodiodes,high gain

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