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      Moiré potential impedes interlayer exciton diffusion in van der Waals heterostructures

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          Abstract

          Interlayer exciton diffusion in transition metal dichalcogenide heterostructures is controlled by the moiré potential.

          Abstract

          The properties of van der Waals heterostructures are drastically altered by a tunable moiré superlattice arising from periodically varying atomic alignment between the layers. Exciton diffusion represents an important channel of energy transport in transition metal dichalcogenides (TMDs). While early studies performed on TMD heterobilayers suggested that carriers and excitons exhibit long diffusion, a rich variety of scenarios can exist. In a moiré crystal with a large supercell and deep potential, interlayer excitons may be completely localized. As the moiré period reduces at a larger twist angle, excitons can tunnel between supercells and diffuse over a longer lifetime. The diffusion should be the longest in commensurate heterostructures where the moiré superlattice is completely absent. Here, we experimentally demonstrate the rich phenomena of interlayer exciton diffusion in WSe 2/MoSe 2 heterostructures by comparing several samples prepared with chemical vapor deposition and mechanical stacking with accurately controlled twist angles.

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          Van der Waals heterostructures and devices

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            Vertical and in-plane heterostructures from WS2/MoS2 monolayers.

            Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature. Vertically stacked bilayers with WS2 epitaxially grown on top of the MoS2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p-n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties.
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              Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides:\({\mathrm{MoS}}_{2}\),\(\mathrm{Mo}\mathrm{S}{\mathrm{e}}_{2}\),\({\mathrm{WS}}_{2}\), and\(\mathrm{WS}{\mathrm{e}}_{2}\)

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                Author and article information

                Journal
                Sci Adv
                SciAdv
                advances
                Science Advances
                American Association for the Advancement of Science
                2375-2548
                September 2020
                23 September 2020
                : 6
                : 39
                : eaba8866
                Affiliations
                [1 ]Department of Physics, Complex Quantum Systems, and Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA.
                [2 ]Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan.
                [3 ]Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan.
                [4 ]Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan.
                [5 ]Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei 11529, Taiwan.
                [6 ]National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
                [7 ]Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of Korea.
                [8 ]Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hsinchu 30010, Taiwan.
                Author notes
                [*]

                These authors contributed equally to this work.

                []Corresponding author. Email: elaineli@ 123456physics.utexas.edu (X.L.); whchang@ 123456mail.nctu.edu.tw (W.-H.C.)
                Author information
                http://orcid.org/0000-0002-8740-650X
                http://orcid.org/0000-0001-8064-4989
                http://orcid.org/0000-0002-8236-8794
                http://orcid.org/0000-0002-3926-0104
                http://orcid.org/0000-0003-3701-8119
                http://orcid.org/0000-0002-3013-0477
                http://orcid.org/0000-0003-2734-7023
                http://orcid.org/0000-0002-2279-3078
                http://orcid.org/0000-0003-4880-6006
                Article
                aba8866
                10.1126/sciadv.aba8866
                7531884
                32967823
                4697fa29-df09-4d29-bb2c-8d4cb3381d8e
                Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

                This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.

                History
                : 13 January 2020
                : 06 August 2020
                Funding
                Funded by: doi http://dx.doi.org/10.13039/100000001, National Science Foundation;
                Award ID: DMR-1720595
                Funded by: doi http://dx.doi.org/10.13039/100000001, National Science Foundation;
                Award ID: EFMA-1542747
                Funded by: doi http://dx.doi.org/10.13039/100000001, National Science Foundation;
                Award ID: EFMA-1542747
                Funded by: doi http://dx.doi.org/10.13039/100000015, U.S. Department of Energy;
                Award ID: DE-SC0019398
                Funded by: doi http://dx.doi.org/10.13039/100000015, U.S. Department of Energy;
                Award ID: DE-SC0019398
                Funded by: doi http://dx.doi.org/10.13039/100000928, Welch Foundation;
                Award ID: F-1672
                Funded by: doi http://dx.doi.org/10.13039/501100004663, Ministry of Science and Technology, Taiwan;
                Award ID: 105-2119-M-009-014-MY3
                Funded by: doi http://dx.doi.org/10.13039/501100004663, Ministry of Science and Technology, Taiwan;
                Award ID: 107-2112-M-009-024-MY3
                Funded by: doi http://dx.doi.org/10.13039/100000928, Welch Foundation;
                Award ID: F-1662
                Funded by: doi http://dx.doi.org/10.13039/501100004663, Ministry of Science and Technology, Taiwan;
                Funded by: doi http://dx.doi.org/10.13039/501100003725, National Research Foundation of Korea;
                Award ID: 2017R1D1B04036381
                Funded by: doi http://dx.doi.org/10.13039/501100002241, Japan Science and Technology Agency;
                Award ID: CREST-JPMJCR15F3
                Funded by: doi http://dx.doi.org/10.13039/501100001700, Ministry of Education, Culture, Sports, Science, and Technology;
                Award ID: Elemental Strategy Initiative
                Funded by: doi http://dx.doi.org/10.13039/501100004543, China Scholarship Council;
                Award ID: 201706050068
                Funded by: doi http://dx.doi.org/10.13039/100006831, U.S. Air Force;
                Award ID: FA2386-18-1-4097
                Funded by: doi http://dx.doi.org/10.13039/501100004663, Ministry of Science and Technology, Taiwan;
                Award ID: MOST-107-2917-I-564-010
                Funded by: doi http://dx.doi.org/10.13039/501100001700, Ministry of Education, Culture, Sports, Science, and Technology;
                Award ID: Elemental Strategy Initiative
                Funded by: doi http://dx.doi.org/10.13039/501100002241, Japan Science and Technology Agency;
                Award ID: CREST-JPMJCR15F3
                Funded by: doi http://dx.doi.org/10.13039/501100004663, Ministry of Science and Technology, Taiwan;
                Award ID: MOST 108-2119-M-007-008
                Funded by: doi http://dx.doi.org/10.13039/501100004663, Ministry of Science and Technology, Taiwan;
                Funded by: doi http://dx.doi.org/10.13039/501100004663, Ministry of Science and Technology, Taiwan;
                Award ID: MOST 108-2119-M-007-008
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