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Random dopant effect on Vt variations affecting the soft-error rates of nanoscale CMOS Memory cells
Author(s):
A. Balasubramanian
,
AL Sternberg
,
PR Fleming
,
BL Bhuva
,
S Kalemeris
,
LW Massengill
Publication date:
2007
Journal:
Random dopant effect on Vt variations affecting the soft-error rates of nanoscale CMOS Memory cells
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EU NanoSafety Cluster Publications: Journal Articles
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ScienceOpen disciplines:
Nanomaterials
,
Materials science
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