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      On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

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          Electronic properties of two-dimensional systems

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            Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

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              Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                00189383
                Dec. 1994
                : 41
                : 12
                : 2357-2362
                Article
                10.1109/16.337449
                47657cea-925b-4553-aa7c-ba54b4143016
                History

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