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      Periodically Driven Quantum Systems: Effective Hamiltonians and Engineered Gauge Fields

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      Physical Review X
      American Physical Society (APS)

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          Quantum Spin Hall Effect in Graphene

          We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
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            Strain-induced pseudo-magnetic fields greater than 300 tesla in graphene nanobubbles.

            Recent theoretical proposals suggest that strain can be used to engineer graphene electronic states through the creation of a pseudo-magnetic field. This effect is unique to graphene because of its massless Dirac fermion-like band structure and particular lattice symmetry (C3v). Here, we present experimental spectroscopic measurements by scanning tunneling microscopy of highly strained nanobubbles that form when graphene is grown on a platinum (111) surface. The nanobubbles exhibit Landau levels that form in the presence of strain-induced pseudo-magnetic fields greater than 300 tesla. This demonstration of enormous pseudo-magnetic fields opens the door to both the study of charge carriers in previously inaccessible high magnetic field regimes and deliberate mechanical control over electronic structure in graphene or so-called "strain engineering."
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              Floquet topological insulator in semiconductor quantum wells

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                Author and article information

                Journal
                PRXHAE
                Physical Review X
                Phys. Rev. X
                American Physical Society (APS)
                2160-3308
                August 2014
                August 18 2014
                : 4
                : 3
                Article
                10.1103/PhysRevX.4.031027
                47e574c1-4953-4df4-beea-6d03f614b28a
                © 2014

                http://creativecommons.org/licenses/by/3.0/

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