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      Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices

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          Abstract

          Among emerging non-volatile storage technologies, redox-based resistive switching Random Access Memory (ReRAM) is a prominent one. The realization of Boolean logic functionalities using ReRAM adds an extra edge to this technology. Recently, 7-state ReRAM devices were used to realize ternary arithmetic circuits, which opens up the computing space beyond traditional binary values. In this manuscript, we report realization of multi-valued and fuzzy logic operators with a representative application using ReRAM devices. Multi-valued logic (MVL), such as Łukasiewicz logic generalizes Boolean logic by allowing more than two truth values. MVL also permits operations on fuzzy sets, where, in contrast to standard crisp logic, an element is permitted to have a degree of membership to a given set. Fuzzy operations generally model human reasoning better than Boolean logic operations, which is predominant in current computing technologies. When the available information for the modelling of a system is imprecise and incomplete, fuzzy logic provides an excellent framework for the system design. Practical applications of fuzzy logic include, industrial control systems, robotics, and in general, design of expert systems through knowledge-based reasoning. Our experimental results show, for the first time, that it is possible to model fuzzy logic natively using multi-state memristive devices.

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          Most cited references23

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          A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

          Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
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            Fuzzy logic and approximate reasoning

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              Beyond von Neumann--logic operations in passive crossbar arrays alongside memory operations.

              The realization of logic operations within passive crossbar memory arrays is a promising approach to expand the fields of application of such architectures. Material implication was recently suggested as the basic function of memristive crossbar junctions, and single bipolar resistive switches (BRS) as well as complementary resistive switches (CRS) were shown to be capable of realizing this logical functionality. Based on a systematic analysis of the Boolean functions, we demonstrate here that 14 of 16 Boolean functions can be realized with a single BRS or CRS cell in at most three sequential cycles. Since the read-out step is independent of the logic operation steps, the result of the logic operation is directly stored to memory, making logic-in-memory applications feasible.
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                Author and article information

                Contributors
                v.rana@fz-juelich.de
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                8 January 2018
                8 January 2018
                2018
                : 8
                : 8
                Affiliations
                [1 ]ISNI 0000 0001 2224 0361, GRID grid.59025.3b, School of Computer Science and Engineering, , Nanyang Technological University, ; Singapore, Singapore
                [2 ]ISNI 0000 0001 2297 375X, GRID grid.8385.6, Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, ; 52425 Jülich, Germany
                [3 ]ISNI 0000 0001 2224 0361, GRID grid.59025.3b, School of Physical and Mathematical Sciences, , Nanyang Technological University, ; Singapore, Singapore
                [4 ]ISNI 0000 0001 0728 696X, GRID grid.1957.a, Institut für Werkstoffe der Elektrotechnik II, , RWTH Aachen University, ; 52074 Aachen, Germany
                Author information
                http://orcid.org/0000-0002-5426-9967
                Article
                18329
                10.1038/s41598-017-18329-3
                5758575
                29311689
                483f03ca-afcd-4ce7-8cdb-47cbd14a203c
                © The Author(s) 2017

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 20 September 2017
                : 8 December 2017
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