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      Growth and Characterization of Polycrystalline NbO2 Thin Films on Crystalline and Amorphous Substrates

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          Abstract

          NbO2 is a potential material for nanometric memristor devices, both in the amorphous and the crystalline form. We fabricated NbO2 thin films using RF-magnetron sputtering from a stoichiometric target. The as-deposited films were amorphous regardless of the sputtering parameters. Post deposition vacuum annealing of the films was necessary to achieve crystallinity. A high degree of crystallinity was obtained by optimizing annealing duration and temperature. The resistivity of the material increases as it undergoes a structural transition from amorphous to crystalline with the crystalline films being one order of magnitude more resistive.

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          Most cited references 1

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          Structural distortions in the low-temperature phase of\({\mathrm{NbO}}_{2}\)

           R. Thomas,  J. D. Axe,  R. Pynn (1976)
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            Author and article information

            Journal
            07 October 2019
            Article
            1910.02824
            487b4694-dfa6-4bfd-a4be-e5df5fc32ad4

            http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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            cond-mat.mtrl-sci

            Condensed matter

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