Electron drift mobility model for devices based on unstrained and coherently strained Si/sub 1-x/Ge/sub x/ grown on &gt;001&lt; silicon substrate

Nathan, A.; Manku, T.

doi:10.1109/16.155881

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Electron drift mobility model for devices based on unstrained and coherently strained Si/sub 1-x/Ge/sub x/ grown on >001< silicon substrate

Author(s): T. Manku , A. Nathan

Publication date (Print): Sept. 1992

Journal: IEEE Transactions on Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering

Conyers Herring, Erich Vogt (1956)

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Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

R. People (1986)

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Intrinsic Optical Absorption in Germanium-Silicon Alloys

Frank Herman, Rubin Braunstein, Arnold R. Moore (1958)

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Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 00189383

Publication date (Print): Sept. 1992

Volume: 39

Issue: 9

Pages: 2082-2089

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DOI: 10.1109/16.155881

SO-VID: 48ab03e2-ebee-4f05-b769-3bd08b603073

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Electron drift mobility model for devices based on unstrained and coherently strained Si/sub 1-x/Ge/sub x/ grown on >001< silicon substrate

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SAXS

Most cited references 21

Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering

Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

Intrinsic Optical Absorption in Germanium-Silicon Alloys

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Electron drift mobility model for devices based on unstrained and coherently strained Si/sub 1-x/Ge/sub x/ grown on &gt;001&lt; silicon substrate

Read this article at

SAXS

Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering

Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

Intrinsic Optical Absorption in Germanium-Silicon Alloys

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Electron drift mobility model for devices based on unstrained and coherently strained Si/sub 1-x/Ge/sub x/ grown on >001< silicon substrate