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      Undoped AlGaN/GaN HEMTs for microwave power amplification

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          Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

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            The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

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              Scattering of electrons at threading dislocations in GaN

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                00189383
                March 2001
                : 48
                : 3
                : 479-485
                Article
                10.1109/16.906439
                4978a794-dec0-4ebc-bd48-f503bac796a4
                © 2001
                History

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