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      Understanding Quasi-Ballistic Transport in Nano-MOSFETs: Part II—Technology Scaling Along the ITRS

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          Ballistic metal‐oxide‐semiconductor field effect transistor

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            Elementary scattering theory of the Si MOSFET

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              Essential physics of carrier transport in nanoscale MOSFETs

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9383
                December 2005
                December 2005
                : 52
                : 12
                : 2736-2743
                Article
                10.1109/TED.2005.859566
                49a8bfc7-7d36-4206-84ea-8ae60495b066
                © 2005
                History

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