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      Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1−xN/GaN heterostructures

      Author(s): , , , , ,
      Publication date Created:
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      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Strain-induced polarization in wurtzite III-nitride semipolar layers

          J. S. Speck, S. Nakamura, A. E. Romanov … (2006)
          Article 0 comments Cited 188 times – based on 0 reviews     Review now
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            Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes

            Makoto Saito, Kenji Fujito, James Speck … (2007)
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              Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes

              Kuniyoshi Okamoto, Hiroaki Ohta, Shigefusa Chichibu … (2007)
              Article 0 comments Cited 40 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: January 25 2010
                Publication date (Print): January 25 2010
                Volume: 96
                Issue: 4
                Page: 041913
                Article
                DOI: 10.1063/1.3276561
                SO-VID: 4adbee07-8285-4366-949b-3ac62aa7b342
                Copyright © © 2010
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