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      Chemical Vapor Deposition Growth of High Crystallinity Sb2 Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors.

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          Abstract

          Low-dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb2 Se3 nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb2 Se3 NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle-resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb2 Se3 NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb2 Se3 NW exhibit a wide spectral photoresponse range from visible to NIR (400-900 nm). Owing to the high crystallinity of Sb2 Se3 NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W-1 , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb2 Se3 NW, the device exhibits polarization-dependent photoresponse. The high crystallinity and superior anisotropy of Sb2 Se3 NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.

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          Author and article information

          Journal
          Small
          Small (Weinheim an der Bergstrasse, Germany)
          Wiley
          1613-6829
          1613-6810
          Mar 2019
          : 15
          : 9
          Affiliations
          [1 ] Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China.
          [2 ] Chemistry and Chemical Engineering, Xi'an University of Architecture and Technology, Xi'an, 710055, P. R. China.
          [3 ] Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education, Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
          [4 ] Institute of Physical Science and Information Technology, School of Physics and Materials Science, Anhui University, Hefei, 230601, P. R. China.
          [5 ] State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.
          Article
          10.1002/smll.201805307
          30706663
          4af2ce3d-00bf-4c60-b415-e1268739ca3b
          History

          anisotropy,antimony triselenide (Sb2Se3),photodetector,CVD growth,nanowire

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