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      High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

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          Abstract

          High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures is achieved by exploiting the broad‐band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near‐infrared to the visible spectrum.

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          Rapid planetesimal formation in turbulent circumstellar discs

          Anders Johansen, Jeffrey S. Oishi, Mordecai-Mark Mac Low … (2007)
          The initial stages of planet formation in circumstellar gas discs proceed via dust grains that collide and build up larger and larger bodies (Safronov 1969). How this process continues from metre-sized boulders to kilometre-scale planetesimals is a major unsolved problem (Dominik et al. 2007): boulders stick together poorly (Benz 2000), and spiral into the protostar in a few hundred orbits due to a head wind from the slower rotating gas (Weidenschilling 1977). Gravitational collapse of the solid component has been suggested to overcome this barrier (Safronov 1969, Goldreich & Ward 1973, Youdin & Shu 2002). Even low levels of turbulence, however, inhibit sedimentation of solids to a sufficiently dense midplane layer (Weidenschilling & Cuzzi 1993, Dominik et al. 2007), but turbulence must be present to explain observed gas accretion in protostellar discs (Hartmann 1998). Here we report the discovery of efficient gravitational collapse of boulders in locally overdense regions in the midplane. The boulders concentrate initially in transient high pressures in the turbulent gas (Johansen, Klahr, & Henning 2006), and these concentrations are augmented a further order of magnitude by a streaming instability (Youdin & Goodman 2005, Johansen, Henning, & Klahr 2006, Johansen & Youdin 2007) driven by the relative flow of gas and solids. We find that gravitationally bound clusters form with masses comparable to dwarf planets and containing a distribution of boulder sizes. Gravitational collapse happens much faster than radial drift, offering a possible path to planetesimal formation in accreting circumstellar discs.
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            Simple analytical expression for the peak-frequency shifts of plasmonic resonances for sensing

            Jianji Yang, Harald Giessen, Philippe Lalanne (2015)
            We derive a closed-form expression that accurately predicts the peak frequency-shift and broadening induced by tiny perturbations of plasmonic nanoresonators without critically relying on repeated electrodynamic simulations of the spectral response of nanoresonator for various locations, sizes or shapes of the perturbing objects. The force of the present approach, in comparison with other approaches of the same kind, is that the derivation is supported by a mathematical formalism based on a rigorous normalization of the resonance modes of nanoresonators consisting of lossy and dispersive materials. Accordingly, accurate predictions are obtained for a large range of nanoparticle shapes and sizes, used in various plasmonic nanosensors, even beyond the quasistatic limit. The expression gives quantitative insight, and combined with an open-source code, provides accurate and fast predictions that are ideally suited for preliminary designs or for interpretation of experimental data. It is also valid for photonic resonators with large mode volumes.
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              Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.

              Jason S Ross, Philip Klement, Aaron M Jones … (2014)
              The development of light-emitting diodes with improved efficiency, spectral properties, compactness and integrability is important for lighting, display, optical interconnect, logic and sensor applications. Monolayer transition-metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of the MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and, combined with the high optical quality of WSe2, yields bright electroluminescence with 1,000 times smaller injection current and 10 times smaller linewidth than in MoS2 (refs 17,18). Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged and neutral excitons. This system has the required ingredients for new types of optoelectronic device, such as spin- and valley-polarized light-emitting diodes, on-chip lasers and two-dimensional electro-optic modulators.
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                Author and article information

                Journal
                Journal ID (nlm-ta): Adv Mater
                Journal ID (iso-abbrev): Adv. Mater. Weinheim
                Journal ID (doi): 10.1002/(ISSN)1521-4095
                Journal ID (publisher-id): ADMA
                Title: Advanced Materials (Deerfield Beach, Fla.)
                Publisher: John Wiley and Sons Inc. (Hoboken )
                ISSN (Print): 0935-9648
                ISSN (Electronic): 1521-4095
                Publication date (Electronic): 15 May 2015
                Publication date (Print): July 2015
                Volume: 27
                Issue: 25 ( doiID: 10.1002/adma.v27.25 )
                Pages: 3760-3766
                Affiliations
                [ 1 ] School of Physics and AstronomyThe University of Nottingham Nottingham NG7 2RDUK
                [ 2 ] School of Physics & AstronomyUniversity of Manchester Oxford Road Manchester M13 9PLUK
                [ 3 ] Institute for Problems of Materials ScienceThe National Academy of Sciences of Ukraine Chernivtsi 58001Ukraine
                [ 4 ]Institute of Microelectronics Technology RAS Chernogolovka 142432Russia
                [ 5 ] Department of PhysicsUniversity of Warwick Coventry CV4 7ALUK
                Author notes
                Article
                Publisher ID: ADMA201500889
                DOI: 10.1002/adma.201500889
                PMC ID: 4768130
                PubMed ID: 25981798
                SO-VID: 4b354e1a-3c63-45eb-a5d4-cf0b2792a091
                Copyright © © 2015 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
                License:

                This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

                History
                Date received : 20 February 2015
                Date revision received : 21 April 2015
                Page count
                Pages: 7
                Categories
                Subject: Communication
                Subject: Communications
                Custom metadata
                source-schema-version-number 2.0
                component-id adma201500889
                cover-date July 1, 2015
                details-of-publishers-convertor Converter:WILEY_ML3GV2_TO_NLMPMC version:4.7.6 mode:remove_FC converted:17.02.2016

                ScienceOpen disciplines: Materials science
                Keywords: graphene,indium selenide,photoconductivity,van der waals crystals
                Data availability:
                ScienceOpen disciplines: Materials science
                Keywords: graphene, indium selenide, photoconductivity, van der waals crystals

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