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      Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

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          Most cited references 21

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          High dislocation densities in high efficiency GaN‐based light‐emitting diodes

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            Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

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              X-ray diffraction of III-nitrides

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                Author and article information

                Journal
                Semiconductor Science and Technology
                Semicond. Sci. Technol.
                IOP Publishing
                0268-1242
                1361-6641
                March 01 2013
                March 01 2013
                February 04 2013
                : 28
                : 3
                : 035006
                10.1088/0268-1242/28/3/035006
                © 2013

                http://iopscience.iop.org/info/page/text-and-data-mining

                http://iopscience.iop.org/page/copyright

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