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Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

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      Most cited references 21

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      High dislocation densities in high efficiency GaN‐based light‐emitting diodes

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        Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

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          X-ray diffraction of III-nitrides

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            Author and article information

            Journal
            Semiconductor Science and Technology
            Semicond. Sci. Technol.
            IOP Publishing
            0268-1242
            1361-6641
            March 01 2013
            March 01 2013
            February 04 2013
            : 28
            : 3
            : 035006
            10.1088/0268-1242/28/3/035006
            © 2013

            http://iopscience.iop.org/info/page/text-and-data-mining

            http://iopscience.iop.org/page/copyright

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